features ul recognition file number e320098 universal 3-way terminals: snap-on, wire typical ir less than 1.0 a typical applications general purpose use in ac/dc bridge full wave case: gbpc epoxy meets ul 94 v-o flammability rating nickel plated on faston lugs terminals: , solderable per j-std-002 and jesd22-b102. polarity: as marked weight : 18g (0.63 ozs) semiconductor rohs rohs page 1 of 4 glass passivated single-phase bridge rectifier, 35a n high power products ell compliant to rohs wrap-around, or pcb mounting high surge current capability low thermal resistance solder dip 260c, 40s rectification for power supply, home appliances, office equipment, industrial automation applications. mechanical data mounting torque: 20 inches-lbs. max. (m5 screw) 36MB 36MB08 thru 36MB16 glass passivated chips ~ ~ 28.5 + 0.5 - 5 5 28.5 + 0.5 22.2 + 0.3 21 + 0.5 22.2 + 0.3 - - - - 9.5 0.8 6.3 5 +0.3 0 - + ~ - ~ + all dimensions in millimeters primary characterristics i f(av) 35a v rrm 800v to 1600v 1.1v 5 a 150oc i fsm i r v f t j max. 400a
semiconductor rohs rohs page 2 of 4 n high power products ell maximum ratings (t = 25c unless otherwise noted) a parameter vv symbol 36MB unit 900 10 1100 1300 1700 800 1000 1200 1600 08 16 12 800 1000 1200 1600 v maximum repetitive peak reverse voltage maximum rsm voltage (non-repetitve peak reverse voltage) maximum dc blocking voltage maximum average forward rectified output current (fig.1) peak forward surge current single sine-wave superimposed on rated load rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms) for fusing rms isolation voltage from case to leads operating junction storage temperature range v rrm v rms i fsm v dc i f(av) v iso i t 2 t ,t j stg 2500 660 35 -55 to 150 400 a s 2 aa v oc electrical characteristics (t = 25c unless otherwise noted) a parameter v a symbol 36MB unit 10 08 16 12 maximum instantaneous forward drop per diode maximum reverse dc current at rated dc blocking typical junction capacitance per diode v f i r c j 300 500 1.1 5 pf voltage per diode test conditions i f = 17.5a t a = 25 c 4v, 1mhz t a = 150 c thermal characteristics (t = 25c unless otherwise noted) a parameter c/w symbol 36MB unit 10 08 16 12 typical thermal resistance (1) with heatsink r jc (1) (2) bolt down on heatsink with silicone thermal compound between bridge a nd mounting surface for maximum heat transfer with notes #10 screw 1.4 36MB
semiconductor rohs rohs n high power products ell ( ) average forward current a ( ) average forward current a case temperature ( ! ) ambient temperature ( ) c fig maximum output rectified current .1 fig maximum output rectified current .2 peak forward surge current (a) number of cycles at 60 hz ( ) average power dissipation of bridge w average output current (a) fig maximum power dissipation .3 fig. maximum non-repetitive peak forward 4 page 3 of 4 0 10 20 30 40 0 10 20 30 40 50 60 70 80 capacitive load t j = t j max. resistive or inductive load surge current per diode 0 25 50 75 100 125 150 175 200 0 5 10 15 20 25 30 35 40 bridges mounted on 9.5 3.5 4.6" x x (22.9 8.9 11.7 ) x x cm al finned plate . 60 h z resistive or inductive load 0 10 20 30 40 50 60 70 80 90 100 0 5 10 15 20 25 30 35 40 60 h z resistive or inductive load rths a c w - = 0.5 / 1000 100 10 1 10 100 1.0 cycle t j = t j max. 0.5 - single sine wave 36MB
page 4 of 4 semiconductor rohs rohs n high power products ell 0.4 0.6 0.8 1 1.2 1.4 1.6 0.01 0.1 1 10 100 t j = 25 pulse width = 300 1% duty cycle c s ( ) instantaneous forward current a fig typical instantaneous forward .5 characteristics per leg instantaneous forward voltage (v) fig typical reveres leakage .6 characteristics per leg instantaneous reverse leakage current (a) percent of rated peak reverse voltage (%) 0 20 40 60 80 100 0.01 0.1 1 10 100 t j = 125 c t j = 25 c fig typical junction capacitance .7 per leg fig typical transient thermal lmpedance .8 per leg ( ) junction capacitance p f ( ) transient thermal lmpedance (cw) p f reverse voltage (v) t heating , time (sec.) 0.01 0.1 1 10 100 1 10 100 1,000 t j = 25 f mh = 1.0 z vsig mvp p = 50 - 10 100 1,000 1 10 100 f mh = 1.0 vsig mvp p = 50 - c t j = 25 c t j = 25 c 36MB
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